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| SBD T y p e : C20T04QH-11A 20T0 QHT04 OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg C20T04QH-11A 40 45(pulse width 1s duty 1/50) 50 Hz Full Sine Wave 20 Tc=127C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle 180 Non-repetitive -40 to +150 -40 to +150 Unit V V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 10 A per arm Min. Typ. Max. 1 0.61 1.5 Unit mA V C /W Rth(j-c) Junction to Case C_T_ 11A OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C20T04QH/C20T04QH-11A (per Arm) 50 INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25C Tj=150C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C20T04QH/C20T04QH-11A (Total) RECT 180 16 AVERAGE FORWARD POWER DISSIPATION (W) 14 12 10 8 6 4 2 0 0 4 8 12 16 SINE WAVE 20 24 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 50 C20T04QH/C20T04QH-11A (per Arm) PEAK REVERSE CURRENT (mA) 20 10 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C20T04QH/C20T04QH-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 1.6 RECT 180 1.2 SINE WAVE 0.8 0.4 0 0 10 20 30 40 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =40 V C20T04QH/C20T04QH-11A (Total) RECT 180 24 AVERAGE FORWARD CURRENT (A) 20 SINE WAVE 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 200 C20T04QH/C20T04QH-11A SURGE FORWARD CURRENT (A) 160 120 80 40 I FSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C20T04QH/C20T04QH-11A (per Arm) 1000 JUNCTION CAPACITANCE (pF) 500 200 100 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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